12-8 vol. 1 sales offices: visit our web site at http://www.temex.com silicon pin diodes plastic package surface mount attenuating silicon pin diodes plastic package surface mount attenuating silicon pin diodes description temex uses its proprietary technology to manufacture its silicon pin diodes in plastic package. this product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. the use of this technology eliminates wire bonding on to the chips. applications typical applications include variable rf attenuators and agc (automatic gain control) circuits, from mhz to several ghz. the attenuating pin diode uses properties of variation of forward series resistance versus the dc forward bias current. in order to obtain the best dynamic range, a single diode attenuator may be used in series or shunt con?uration or designed as a multiple diode circuit (t or p circuit), where the device may be matched through the attenuation range. note: to reduce the distortion, it is necessary to verify and design with the following formula: hf l i dc f hf : rf peak current (a) l : diode minority carrier lifetime (s) i dc : dc bias current (a) f : application frequency (hz) << 1 0.1 1 10 1 10 100 1000 r sf ( ? ) typical series resistance versus forward current i f (ma) dh40144 dh40225 dh40141 typical performance curve
12-9 vol. 1 sales offices: visit our web site at http://www.temex.com silicon pin diodes plastic package surface mount attenuating silicon pin diodes electrical i zone forward series junction reverse carrier parameters thickness resistance rsf ( ? ) capacitance current lifetime (1) c j (2) i r i typ. min. max min. max min. max typ. max max typ. dh40141 140 400 800 50 100 6.5 13 0.05 0.10 10 2.5 dh40144 140 200 400 25 50 3.5 7 0.10 0.30 10 5.0 dh40225 220 400 800 50 100 6.5 13 0.10 0.30 10 7.0 i f = 0.1 ma i f = 1 ma i f = 10 ma pf ? ? test conditions ? f = 120 mhz f = 1 mhz v r = 100 v i f = 10 ma i r = 6 ma (1) other i zone thicknesses on request (2) other capacitance values on request (measured at 50 v) temperature ranges: operating junction (t j ) : - 55 c to + 125 c storage : - 65 c to + 150 c electrical characteristics at 25 c type packages sod323 sot23 sot143 packages dh40141 dh40141-60 dh40141-51 dh40141-70 dh40144 dh40144-60 dh40144-51 dh40144-70 dh40225 dh40225-60 dh40225-51 dh40225-70 (1) other con?uration available on request. how to order? dh40141 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 87: sot323
|
